An anisotropic van der Waals dielectric for symmetry engineering in functionalized heterointerfaces
Zeya Li, Junwei Huang, Ling Zhou, Zian Xu, Feng Qin, Peng Chen, Xiaojun Sun, Gan Liu, C. Sui, Caiyu Qiu, Yangfan Lu, Huiyang Gou, Xiaoxiang Xi, Toshiya Ideue, Peizhe Tang, Yoshihiro Iwasa, Hongtao Yuan
Abstract
Abstract Van der Waals dielectrics are fundamental materials for condensed matter physics and advanced electronic applications. Most dielectrics host isotropic structures in crystalline or amorphous forms, and only a few studies have considered the role of anisotropic crystal symmetry in dielectrics as a delicate way to tune electronic properties of channel materials. Here, we demonstrate a layered anisotropic dielectric, SiP 2 , with non-symmorphic twofold-rotational C 2 symmetry as a gate medium which can break the original threefold-rotational C 3 symmetry of MoS 2 to achieve unexpected linearly-polarized photoluminescence and anisotropic second harmonic generation at SiP 2 /MoS 2 interfaces. In contrast to the isotropic behavior of pristine MoS 2 , a large conductance anisotropy with an anisotropy index up to 1000 can be achieved and modulated in SiP 2 -gated MoS 2 transistors. Theoretical calculations reveal that the anisotropic moiré potential at such interfaces is responsible for the giant anisotropic conductance and optical response. Our results provide a strategy for generating exotic functionalities at dielectric/semiconductor interfaces via symmetry engineering.