Decoding the Double/Multiple Hysteresis Loops in Antiferroelectric Materials
Tengfei Hu, Zhengqian Fu, Zhenqin Li, Meng Liu, Linlin Zhang, Ziyi Yu, Xuefeng Chen, Yunzhe Zheng, Tie Li, Yuelin Wang, Genshui Wang, Xianlin Dong, Fangfang Xu
Abstract
Antiferroelectric materials has become one of the most promising candidates for pulsed power capacitors. The polarization versus electric-field hysteresis loop is the key electrical property for evaluating their energy-storage performance. Here, we applied in situ biasing transmission electron microscopy to decode two representative energy-storage behaviors-namely, multiple and double hysteresis loops-in (Pb,La)(Zr,Sn,Ti)O3 system. Simultaneous structural examination and domain/defects observation establish a direct relationship between phase transitions and hysteresis loops. Sustaining a smaller period of modulated structure to a certain applied electric field and then undergoing additional transitions among varying antiferroelectric phases with increasing modulation periods before the final antiferroelectric-ferroelectric transition leads to the favorable multiple-loop configuration that realizes a high energy-storage performance. Such phenomenon is described by a model in terms of defect-driven phase transition. The distinctive mechanisms of multiple phase transition will inspire future composition-design for high switch-fielding antiferroelectric materials.