Efficient Suppression of Persistent Photoconductivity in β-Ga<sub>2</sub>O<sub>3</sub>-Based Photodetectors with Square Nanopore Arrays
Huarong Yang, Tong‐Huai Cheng, Qian Xin, Yiyuan Liu, Hua Yu Feng, Feng Luo, Wenxiang Mu, Zhitai Jia, Xutang Tao
Abstract
In this work, square nanopore arrays were developed on the surface of β-Ga 2 O 3 microflakes using focused ion beam (FIB) etching, and solar-blind photodetectors (PDs) were fabricated based on the β-Ga 2 O 3 microflakes with square nanopore arrays. The β-Ga 2 O 3 microflake-based device was transformed from a gate voltage depletion mode to an oxygen depletion mode by FIB etching. The developed device exhibited excellent solar-blind PD performance with extremely high responsivity (1.8 × 10 5 at 10 V), detectivity (3.4 × 10 18 Jones at 10 V), and light-to-dark ratio (9.3 × 10 8 at 5 V) as well as good repeatability and excellent stability. The intrinsic mechanism responsible for this performance was then systematically discussed. This work opens up a new avenue for the fabrication of high-performance β-Ga 2 O 3 -based low-dimensional PDs with high reproducibility by employing the FIB etching process.