Synthesis and Characterization of Transition Metal Dichalcogenide Nanoribbons Based on a Controllable O<sub>2</sub> Etching
Rubén Cantón-Vitoria, T Hotta, Mengsong Xue, Shaochun Zhang, Ryo Kitaura
Abstract
High Resolution Image Download MS PowerPoint Slide Although the synthesis of monolayer transition metal dichalcogenides has been established in the last decade, synthesizing nanoribbons remains challenging. In this study, we have developed a straightforward method to obtain nanoribbons with controllable widths (25–8000 nm) and lengths (1–50 μm) by O 2 etching of the metallic phase in metallic/semiconducting in-plane heterostructures of monolayer MoS 2 . We also successfully applied this process for synthesizing WS 2, MoSe 2, and WSe 2 nanoribbons. Furthermore, field-effect transistors of the nanoribbons show an on/off ratio of larger than 1000, photoresponses of 1000%, and time responses of 5 s. The nanoribbons were compared with monolayer MoS 2, highlighting a substantial difference in the photoluminescence emission and photoresponses. Additionally, the nanoribbons were used as a template to build one-dimensional (1D)–1D or 1D–2D heterostructures with various transition metal dichalcogenides. The process developed in this study offers simple production of nanoribbons with applications in several fields of nanotechnology and chemistry.