Multiple Transient Transitions Behavior Analysis of a Double Memristor’s Hidden System and Its Circuit
Chuanhong Du, Licai Liu, Shuaishuai Shi, Yong Wei
Abstract
In this paper, a low-dimensional hidden nonlinear system is constructed by replacing two linear resistors of a simple integrating circuit with two active memristors. The system was analyzed in detail by using the Lyapunov exponent, 0-1 Test, Poincaré map, phase diagram, power spectral density diagram, time-domain waveform, and chaotic characteristic diagram. The results show that the system can oscillate by itself under zero initial conditions, and there are various transient transition behaviors, such as from chaos to limit cycle, chaos to quasi-periodic, quasi-periodic to another quasi-periodic transition, quasi-periodic to periodic transition. Besides, these transient processes themselves include 2, 3, 4, and 5 different states respectively, showing multiple transient transitions behavior, which are not reported in the related literature. It is also found that the initial states of these transition states have rich symmetrical attractors and the stable state is multistability. In addition, the global entropy analysis method is adopted to test the universal existence of transient behaviors, which demonstrates that the system has rich nonlinear characteristics. Finally, the memristive circuit verifies the system's physical feasibility and enriches the application of memristors in circuit theory.