Advances in Research on 300mm Gallium Nitride-on-Si(111) NMOS Transistor and Silicon CMOS Integration
Han Wui Then, M. Radosavljević, Nachiket Desai, Robert Ehlert, Vinaykumar Hadagali, K. Jun, Pratik Koirala, Nicholas G. Minutillo, R. Kotlyar, A. Oni, M. Qayyum, J. Rode, J. Sandford, Tushar K. Talukdar, N. Thomas, H. Vora, P. Wallace, M. Weiß, X. Weng, Pamela R. Fischer
Abstract
We discuss advances in our research on 300mm GaN NMOS by demonstrating GaN-on-Si(111) NMOS transistors achieving low R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> =330Ω-μm; high ID,max=1.7mA/μm; BV <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DS</sub> (at I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D</sub> =1μA/μm) of up to 90V with excellent R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> =660Ω-μm; record f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> /f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">MAX</sub> of 200/350GHz for GaN-on-Si; industry's best RF switch R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</sub> C <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</sub> =55fs; and highest mmwave (28GHz) RF power amplifier peak PAE of 65% @ 19.5dBm saturated power. We discuss and compare the challenges in approaches to GaN and Si CMOS integration research including: (a) poly-silicon CMOS, (b) heterogeneous epitaxy of GaN and Si(111) CMOS, (c) wafer-to-wafer bonding [2], and (d) 3D monolithic Si(100) layer transfer using bonding techniques [1],[3].