Heteroepitaxial α-Ga<sub>2</sub>O<sub>3</sub> MOSFETs with a 2.3 kV breakdown voltage grown by halide vapor-phase epitaxy
Yeong Je Jeong, Ji‐Hyeon Park, Min Jae Yeom, In-Ho Kang, Jeong Yong Yang, Hyeong-Yun Kim, Dae‐Woo Jeon, Geonwook Yoo
Abstract
Abstract Here, we report on heteroepitaxial α -Ga 2 O 3 MOSFETs with a breakdown voltage (BV) of 2.3 kV at a specific on-resistance of 335 mΩ cm 2 . High-quality α -Ga 2 O 3 layers were grown on a sapphire substrate via halide vapor-phase epitaxy (HVPE). A stack of Ti/Al/Ni/Au was used for the S/D electrode, exhibiting significantly reduced contact resistance as compared with a conventional Ti/Au stack. Consequently, the record BV and mobility of 20.4 cm 2 V −1 s −1 were achieved. Moreover, a consistent critical field of 1 MV cm −1 was obtained for variable L GD . Our results are superior to recently reported heteroepitaxial α -/ β -Ga 2 O 3 MOSFETs, which is promising toward HVPE α -Ga 2 O 3 based power devices.