Enhanced Electrical Performance and Stability of La‐Doped Indium Oxide‐Based Thin‐Film Transistors and Application Explorations
Wenhao Wang, Gang He, Hai Yu, Qian Gao, Leini Wang, Xiaofen Xu, Yongchun Zhang, Xiaoyu Wu, Bo He
Abstract
Metal‐oxide‐based thin‐film transistors (TFTs) fabricated by aqueous solution method are attracting more attention due to their potential applications in large‐scale display devices. Herein, solution‐processed TFTs with InLaO as channel layer are prepared as a function of lanthanum (La) doping molar ratio (La/In). Compared with In 2 O 3 TFT, InLaO‐0.5 TFT demonstrates improved electrical performance, including a large μ FE of 21.35 cm 2 V −1 s −1 , a higher I on / I off of ≈10 8 , a smaller interfacial trap states ( D it ) of 5.01 × 10 11 cm −2 , and a smaller subthreshold slope of 0.076 V decade −1 . Low‐frequency noise tests are also carried out and conclude that the interfacial trap density of In 2 O 3 TFTs can be modulated by La doping. Meanwhile, InLaO‐0.5 TFT also represents excellent bias stress stability, including threshold voltage shift (Δ V TH ) of 0.13 and −0.03 V under positive and negative bias stress for 3600 s, respectively. Finally, a low‐voltage resistor‐loaded inverter has been built based on InLaO‐0.5 TFT, exhibiting full‐swing characteristics and a maximum gain of 10.2. All experimental results demonstrate the potential application of aqueous solution technology for future low‐cost, energy‐efficient, large‐scale, and high‐performance electronics.