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Nanowatt use 8 V switching nonvolatile memory transistors with 2D MoTe2 channel and ferroelectric P(VDF-TrFE)

Yongjae Cho, Hyunmin Cho, Sungjae Hong, Donghee Kang, Yeonjin Yi, Cheolmin Park, Ji Hoon Park, Seongil Im

2020Nano Energy27 citationsDOI

Topics & Concepts

Materials scienceNon-volatile memoryOptoelectronicsTransistorFerroelectricityOhmic contactVoltageDiodeThreshold voltageElectrical engineeringNanotechnologyLayer (electronics)DielectricEngineering2D Materials and ApplicationsPerovskite Materials and ApplicationsAdvanced Sensor and Energy Harvesting Materials
Nanowatt use 8 V switching nonvolatile memory transistors with 2D MoTe2 channel and ferroelectric P(VDF-TrFE) | Litcius