Atomically Resolved Electrically Active Intragrain Interfaces in Perovskite Semiconductors
Songhua Cai, Jun Dai, Zhipeng Shao, Mathias Uller Rothmann, Yinglu Jia, Caiyun Gao, Mingwei Hao, Shuping Pang, Peng Wang, Shu Ping Lau, Kai Zhu, Joseph J. Berry, Laura M. Herz, Xiao Cheng Zeng, Yuanyuan Zhou
Abstract
calculation of electronic properties. Our results suggest that these structure interfaces are generally electronically benign, whereas their dynamic interaction with point defects can still evoke detrimental effects. This work paves the way toward a more complete fundamental understanding of the microscopic structure-property-performance relationship in metal halide perovskites.
Topics & Concepts
ChemistryPerovskite (structure)SemiconductorCondensed matter physicsOptoelectronicsChemical physicsCrystallographyPhysicsPerovskite Materials and ApplicationsElectronic and Structural Properties of OxidesMagnetic and transport properties of perovskites and related materials