Regulation of oxygen vacancy on behaviors of memristors based on amorphous ZnTiSnO films
Siqin Li, Jigang Du, Jianguo Lü, Bojing Lu, Fei Zhuge, Ruqi Yang, Yangdan Lu, Zhizhen Ye
Abstract
However, it is insufficient and oversimplified to attribute memristive performance to oxygen vacancy only.
Topics & Concepts
MemristorMaterials scienceAmorphous solidVacancy defectOxygenCondensed matter physicsChemical physicsNanotechnologyOptoelectronicsEngineering physicsCrystallographyElectronic engineeringChemistryPhysicsEngineeringOrganic chemistryAdvanced Memory and Neural ComputingNeuroscience and Neural EngineeringTransition Metal Oxide Nanomaterials