High-Performance Photodetector Based on the ReSe<sub>2</sub>/PtSe<sub>2</sub> van der Waals Heterojunction
Yi Song, Ming Li, Jiawang Chen, Yuchen Du, Qinggang Qin, Zengyan Du, Fengxia Zou, Xiaofei Ma, Liang Li, Guanghai Li
Abstract
In recent years, heterojunction photodetectors constructed of two-dimensional materials with no overhanging bonds and lattice mismatches have attracted wide attention due to the advantages of integrating different materials. Here, we report a high-performance photodetector with tunable dual auroral responses based on the semiconductor (ReSe 2 ) and semimetal (PtSe 2 ) heterojunctions, with a high reverse commutation ratio of 6.2 × 10 4 at room temperature. Under visible light irradiation, the photodetector, with an open circuit voltage of 0.2 V and a short circuit current of 19 pA, and a high on/off ratio of 5.5 × 10 4, exhibits a clear photovoltaic effect. At the same time, the photodetector shows a photoelectric responsivity and detectivity of 153 mA/W and 7.72 × 10 11 Jones, respectively. The photodetector also shows a large wideband optical detection capability between ultraviolet and near-infrared light. Our work provides a model to develop future electronic and optoelectronic multifunctional devices based on a 2D semiconductor and a semimetal van der Waals heterojunction.