Advances and challenges in chemical mechanical polishing of silicon carbide: materials, mechanisms, and future directions
Ailin Li, Jiakai Zhou, Xinhuan Niu, Ziliang Liu, Qing Ma, Shaobo Song, Mengqi Wang, Bin Hu
Abstract
Silicon carbide (SiC), a third-generation wide bandgap semiconductor material, demonstrates immense potential in high-temperature, high-frequency, and high-power electronic devices.
Topics & Concepts
Materials scienceSilicon carbideSiliconSemiconductorNanotechnologyEngineering physicsSemiconductor materialsPolishingBand gapCarbideWide-bandgap semiconductorChemical-mechanical planarizationOptoelectronicsMetallurgySemiconductor deviceAdvanced Surface Polishing TechniquesAdvanced ceramic materials synthesisDiamond and Carbon-based Materials Research