Record Power Performance of 33.1 W/mm with 62.9% PAE at X-band and 14.4 W/mm at Ka-band from AlGaN/GaN/AlN:Fe Heterostucture
Ling Yang, Fuchun Jia, Hao Lu, Bin Hou, Meng Zhang, Jiale Du, Qingyuan Chang, Longge Deng, Qian Yu, Shiming Li, Mei Wu, Minhan Mi, Xiaohua Ma, Yue Hao
Abstract
In this work, we report the ultra-high RF power performance of GaN HEMTs at X- and Ka-band achieved by AlGaN/GaN/AlN:Fe heterostructure. Without field-plate design, a record output power density (P <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">out</inf> ) of 33.1 W/mm and a peak power added efficiency (PAE) of 62.9% at X-band were achieved when tuned for maximum power and PAE, respectively. In addition, the laterally scaled-down device delivers a maximum P <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">out</inf> up to 14.4 W/mm at Ka-band. These excellent load-pull results, spanning a broad frequency range, demonstrate the potential of the AlGaN/GaN/AlN:Fe epitaxial structure as an attractive material platform for advancing GaN/SiC HEMTs in RF power amplifier applications.