GaN-on-Si mm-wave RF Devices Integrated in a 200mm CMOS Compatible 3-Level Cu BEOL
Bertrand Parvais, A. Alian, Uthayasankaran Peralagu, R. Rodríguez, Sachin Yadav, Ahmad Khaled, Rana ElKashlan, V. Putcha, A. Sibaja-Hernandez, Ming Zhao, Piet Wambacq, Nadine Collaert, Niamh Waldron
Abstract
We report on the development of mm-wave GaN-on-Si AlGaN HEMTs integrated with a 3 level Cu damascene BEOL flow on 200mm Si <111> wafers. Optimizations of the gate metal stack, contact resistance and gate length scaling to 110nm result in devices with a peak g <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m</inf> of 430 mS/mm and an f <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">MAX</inf> of 135 GHz. While wafer warp was found to increase slightly through the processing of 3 levels of 1µm thick Cu metal, no significant deterioration was observed between devices measured at Metal 1 and Metal 3.