Healing Donor Defect States in CVD‐Grown MoS<sub>2</sub>Field‐Effect Transistors Using Oxygen Plasma with a Channel‐Protecting Barrier
Inseong Lee, Min‐Gu Kang, Seohak Park, Cheolmin Park, Hyeonji Lee, Sanggeun Bae, Hyeongjin Lim, Sungkyu Kim, Woonggi Hong, Sung‐Yool Choi
Abstract
Abstract Molybdenum disulfide (MoS 2 ), a metal dichalcogenide, is a promising channel material for highly integrated scalable transistors. However, intrinsic donor defect states, such as sulfur vacancies (V s ), can degrade the channel properties and lead to undesired n‐doping. A method for healing the donor defect states in monolayer MoS 2 is proposed using oxygen plasma, with an aluminum oxide (Al 2 O 3 ) barrier layer that protects the MoS 2 channel from damage by plasma treatment. Successful healing of donor defect states in MoS 2 by oxygen atoms, even in the presence of an Al 2 O 3 barrier layer, is confirmed by X‐ray photoelectron spectroscopy, photoluminescence, and Raman spectroscopy. Despite the decrease in 2D sheet carrier concentration (Δn 2D = −3.82×10 12 cm −2 ), the proposed approach increases the on‐current and mobility by 18% and 44% under optimal conditions, respectively. Metal–insulator transition occurs at electron concentrations of 5.7×10 12 cm −2 and reflects improved channel quality. Finally, the activation energy ( E a ) reduces at all the gate voltages ( V G ) owing to a decrease in V s , which act as a localized state after the oxygen plasma treatment. This study demonstrates the feasibility of plasma‐assisted healing of defects in 2D materials and electrical property enhancement and paves the way for the development of next‐generation electronic devices.