Litcius/Paper detail

A 4–40 V Wide Input Range Boost Converter With the Protection Re-Cycling Technique for 200 W High Power LiDAR System in a Long-Distance Object Detection

Siyi Li, Sheng Cheng Lee, Sheng-Hsi Hung, Zheng-Lun Huang, Ke‐Horng Chen, Kuo-Lin Zheng, Ying-Hsi Lin, Shian-Ru Lin, Tsung-Yen Tsai

2023IEEE Journal of Solid-State Circuits13 citationsDOI

Abstract

This article presents a high conversion ratio (CR) boost converter with the protection re-cycling (PRC) technique to prevent the eGaN power FET from being damaged. The PRC technique mainly redirects the current to the storage capacitor. When the eGaN power FET is turned off, not only the eGaN power FET will not be damaged by the high <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${L}~\text{d}i$ </tex-math></inline-formula> /d <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t,</i> but also the redirected current can be used to improve efficiency. For automotive applications, the battery voltage may crank to a low voltage of 4 V in the case of sudden power-ON, and immediately rise to a high voltage of 40 V during a loading pump. Therefore, this article also proposed a wide input range (WIR) boost converter to ensure the correct operation of the light detection and ranging (LiDAR) system in any input voltage conditions.

Topics & Concepts

CapacitorLidarVoltageElectrical engineeringPower (physics)High voltageComputer scienceRange (aeronautics)RangingPhysicsEngineeringTelecommunicationsAerospace engineeringOpticsQuantum mechanicsGaN-based semiconductor devices and materialsSemiconductor materials and devicesSilicon Carbide Semiconductor Technologies