Homogeneous 2D MoTe<sub>2</sub> CMOS Inverters and p–n Junctions Formed by Laser‐Irradiation‐Induced p‐Type Doping
Jing Chen, Junqiang Zhu, Qiyuan Wang, Jing Wan, Ran Liu
Abstract
Abstract Among all typical transition‐metal dichalcogenides (TMDs), the bandgap of α‐MoTe 2 is smallest and is close to that of conventional 3D Si. The properties of α‐MoTe 2 make it a favorable candidate for future electronic devices. Even though there are a few reports regarding fabrication of complementary metal–oxide‐semiconductor (CMOS) inverters or p–n junction by controlling the charge‐carrier polarity of TMDs, the fabrication process is complicated. Here, a straightforward selective doping technique is demonstrated to fabricate a 2D p–n junction diode and CMOS inverter on a single α‐MoTe 2 nanoflake. The n‐doped channel of a single α‐MoTe 2 nanoflake is selectively converted to a p‐doped region via laser‐irradiation‐induced MoO x doping. The homogeneous 2D MoTe 2 CMOS inverter has a high DC voltage gain of 28, desirable noise margin (NM H = 0.52 V DD , NM L = 0.40 V DD ), and an AC gain of 4 at 10 kHz. The results show that the doping technique by laser scan can be potentially used for future larger‐scale MoTe 2 CMOS circuits.