Exploring miscut angle influence on (100) β-Ga2O3 homoepitaxial films growth: Comparing MOVPE growth with MBE approaches
Ta‐Shun Chou, Jana Rehm, Saud Bin Anooz, Owen Ernst, A. Akhtar, Zbigniew Galazka, W. Miller, M. Albrecht, Palvan Seyidov, Andreas Fiedler, Andreas Popp
Abstract
In this work, we explored the growth regime of (100) β-Ga2O3 homoepitaxial films on substrates with different miscut angles (1°, 2°, and 4°) in the MOVPE system. Under a low O2/Ga ratio growth condition, step-flow growth of (100) β-Ga2O3 homoepitaxial films can be maintained up to 3 μm on substrates with different miscut angles. Moreover, the results reveal that the growth rate decreases slightly with decreasing miscut angles, which matches estimation of the Burton–Cabrera–Frank theory and can be explained by the model of adsorption–desorption. By comparing the miscut-dependent growth rates, we give experimental evidence on the fundamental difference between the growth of (100) β-Ga2O3 films by MOVPE and MBE. In addition, a transport model is proposed to explain the desorption process in terms of the boundary layer and the kinetic resistance.