Roles of Hole Trap on Gate Leakage of <i>p</i>-GaN HEMTs at Cryogenic Temperatures
Zuoheng Jiang, Xinyu Wang, J. Zhao, Junting Chen, Jinjin Tang, C.K. Wang, Haohao Chen, Sen Huang, Xiaolong Chen, Mengyuan Hua
Abstract
At cryogenic temperatures, <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -GaN high- electron-mobility transistors (HEMTs) exhibit a frozen trap effect that causes hole carriers to become trapped in long-lived states, thereby affecting carrier transport. Capacitance deep-level transient spectroscopy ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${C}$ </tex-math></inline-formula> -DLTS) tests and analysis based on theoretical models are conducted to identify the roles of hole trap on gate leakage current. It is found that frozen hole traps would alter the gate leakage mechanism from Poole-Frenkel (PF) emission to trap-assisted tunneling (TAT) at cryogenic temperatures. Understanding the roles of hole trap on gate leakage is crucial for accurately predicting device performance and optimizing performance for cryogenic applications.