Litcius/Paper detail

Development of n-type epitaxial growth on 200 mm 4H-SiC wafers for the next generation of power devices

Mattia Musolino, E. Carria, Danilo Crippa, Silvio Preti, Mani Azadmand, Marco Mauceri, Mathias Isacson, Michele Calabretta, Angelo Messina

2023Microelectronic Engineering18 citationsDOI

Topics & Concepts

WaferMaterials scienceEpitaxyDopingOptoelectronicsWafer fabricationPower (physics)ReproducibilityPower semiconductor devicePower densityEngineering physicsNanotechnologyStatisticsQuantum mechanicsEngineeringMathematicsPhysicsLayer (electronics)Silicon Carbide Semiconductor TechnologiesElectromagnetic Compatibility and Noise SuppressionSilicon and Solar Cell Technologies
Development of n-type epitaxial growth on 200 mm 4H-SiC wafers for the next generation of power devices | Litcius