Effect of Tantalum ion doping on the structure and electrical properties of Bi3Ti1.5W0.5O9-Bi4Ti3O12 intergrowth bismuth-layered ceramics
Renfen Zeng, Xiangping Jiang, Chao Chen, Xiaokun Huang, Xin Nie, Fen Ye, Junsheng Zhuang, Jun‐Ming Liu
Topics & Concepts
Materials scienceCurie temperatureBismuthDielectricCeramicFerroelectricityOctahedronThermal stabilityIonDopingTantalumBismuth titanateAnalytical Chemistry (journal)FerromagnetismMetallurgyCondensed matter physicsOptoelectronicsChemical engineeringChemistryPhysicsQuantum mechanicsEngineeringChromatographyFerroelectric and Piezoelectric MaterialsMicrowave Dielectric Ceramics SynthesisMultiferroics and related materials