Large area, patterned growth of 2D MoS<sub>2</sub> and lateral MoS<sub>2</sub>–WS<sub>2</sub> heterostructures for nano- and opto-electronic applications
Akhil Sharma, Reyhaneh Mahlouji, Longfei Wu, Marcel A. Verheijen, Vincent Vandalon, Shashank Balasubramanyam, Jan P. Hofmann, W. M. M. Kessels, Ageeth A. Bol
Abstract
Abstract The patterned growth of transition metal dichalcogenides (TMDs) and their lateral heterostructures is paramount for the fabrication of application-oriented electronics and optoelectronics devices. However, the large scale patterned growth of TMDs remains challenging. Here, we demonstrate the synthesis of patterned polycrystalline 2D MoS 2 thin films on device ready SiO 2 /Si substrates, eliminating any etching and transfer steps using a combination of plasma enhanced atomic layer deposition (PEALD) and thermal sulfurization. As an inherent advantage of ALD, precise thickness control ranging from a monolayer to few-layered MoS 2 has been achieved. Furthermore, uniform films with exceptional conformality over 3D structures are obtained. Finally, the approach has been leveraged to obtain in-plane lateral heterostructures of 2D MoS 2 and WS 2 thin films over a large area which opens up an avenue for their direct integration in future nano- and opto-electronic device applications.