IL Scavenging and Recovery Strategies to Improve the Performance and Reliability of HZO-Based FeFETs
Bong Ho Kim, Seong Kwang Kim, Song‐Hyeon Kuk, Yoon‐Je Suh, Jaeyong Jeong, Joon Pyo Kim, Dae‐Myeong Geum, Sanghyeon Kim
Abstract
We investigated the effects of interfacial layer scavenging on the performance and reliability of HZO-based ferroelectric field-effect transistors (FeFETs). IL scavenging effectively reduced operating voltage and improved endurance/retention characteristics. The sub-loop operation and recovery strategies are proposed to extend the endurance characteristics of FeFETs. The results provide insights into the degradation/recovery mechanisms of gate stacks in FeFETs and highlight the importance of recovery speed and controlled IL.
Topics & Concepts
Reliability (semiconductor)Materials scienceDegradation (telecommunications)TransistorOptoelectronicsScavengingVoltageComputer scienceReliability engineeringElectrical engineeringPower (physics)EngineeringTelecommunicationsChemistryPhysicsAntioxidantQuantum mechanicsBiochemistryFerroelectric and Negative Capacitance DevicesSemiconductor materials and devicesAdvanced Memory and Neural Computing