Atomic layer deposition of molybdenum oxide using (N Bu)2(NMe2)2Mo, hydrogen peroxide (H2O2), and ozone (O3) for DRAM application
Seung-Hwan Lee, Hae Lin Yang, Beom Seok Kim, Jin‐Ho Lee, Hanjin Lim, Jin‐Seong Park
Topics & Concepts
Atomic layer depositionMaterials scienceTinMolybdenumHydrogen peroxideSheet resistanceWaferPassivationOxideCrystallinityAnalytical Chemistry (journal)Layer (electronics)Chemical engineeringNanotechnologyMetallurgyChemistryComposite materialOrganic chemistryEngineeringSemiconductor materials and devicesAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices