OFF-state trapping phenomena in GaN HEMTs: Interplay between gate trapping, acceptor ionization and positive charge redistribution
E. Canato, Matteo Meneghini, Carlo De Santi, F. Masin, A. Stockman, P. Moens, Enrico Zanoni, Gaudenzio Meneghesso
Topics & Concepts
TrappingMaterials scienceOptoelectronicsSchottky barrierThreshold voltageTransistorAcceptorCharge (physics)Schottky diodeVoltageAtomic physicsCondensed matter physicsElectrical engineeringPhysicsDiodeEcologyEngineeringQuantum mechanicsBiologyGaN-based semiconductor devices and materialsSemiconductor materials and devicesGa2O3 and related materials