Litcius/Paper detail

An Accurate Model for Threshold Voltage Analysis of Dual Material Double Gate Metal Oxide Semiconductor Field Effect Transistor

Himeli Chakrabarti, Reshmi Maity, Srimanta Baishya, N. P. Maity

2020Silicon24 citationsDOI

Topics & Concepts

Materials scienceDrain-induced barrier loweringThreshold voltageOptoelectronicsVoltageTransistorGate oxideScalingField-effect transistorChannel (broadcasting)Double gateChannel length modulationMetal gateMOSFETElectrical engineeringEngineeringMathematicsGeometrySemiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit DesignIntegrated Circuits and Semiconductor Failure Analysis