Microcavity‐coupled emitters in hexagonal boron nitride
Nicholas V. Proscia, Harishankar Jayakumar, Xiaochen Ge, Gabriel Lopez‐Morales, Zav Shotan, Weidong Zhou, Carlos A. Meriles, Vinod M. Menon
Abstract
Abstract Integration of quantum emitters in photonic structures is an important step in the broader quest to generate and manipulate on‐demand single photons via compact solid‐state devices. Unfortunately, implementations relying on material platforms that also serve as the emitter host often suffer from a tradeoff between the desired emitter properties and the photonic system practicality and performance. Here, we demonstrate “pick and place” integration of a Si 3 N 4 microdisk optical resonator with a bright emitter host in the form of ∼20‐nm‐thick hexagonal boron nitride (hBN). The film folds around the microdisk maximizing contact to ultimately form a hybrid hBN/Si 3 N 4 structure. The local strain that develops in the hBN film at the resonator circumference deterministically activates a low density of defect emitters within the whispering gallery mode volume of the microdisk. These conditions allow us to demonstrate cavity‐mediated out‐coupling of emission from defect states in hBN through the microdisk cavity modes. Our results pave the route toward the development of chip‐scale quantum photonic circuits with independent emitter/resonator optimization for active and passive functionalities.