Accurate electron affinity of Ga and fine structures of its anions
Rulin Tang, Xiaoxi Fu, Yuzhu Lu, Chuangang Ning
Abstract
We report the high-resolution photoelectron spectra of negative gallium anions obtained via the slow-electron velocity-map imaging method. The electron affinity of Ga is determined to be 2429.07(12) cm−1 or 0.301 166(14) eV. The fine structures of Ga are well resolved: 187.31(22) cm−1 or 23.223(27) meV for 3P1 and 502.70(28) cm−1 or 62.327(35) meV for 3P2 above the ground state 3P0, respectively. The photoelectron angular distribution for photodetachment from Ga−(4s24p2 3P0) to Ga(4s25s 2S1/2) is measured. An unexpected perpendicular distribution instead of an isotropic distribution is observed, which is due to a resonance near 3.3780 eV.
Topics & Concepts
IsotropyGalliumElectronSpectral lineElectron affinity (data page)Atomic physicsX-ray photoelectron spectroscopyPerpendicularIonResolution (logic)Ground stateChemistryNuclear magnetic resonancePhysicsOpticsMoleculeNuclear physicsGeometryArtificial intelligenceComputer scienceAstronomyMathematicsOrganic chemistryAdvanced Chemical Physics StudiesElectron and X-Ray Spectroscopy TechniquesX-ray Spectroscopy and Fluorescence Analysis