Effect of annealing temperature on the electrical properties of IZO TFTs
Zhengang Cai, Kamale Tuokedaerhan, Linyu Yang, Zhenhua Huang, Chaozhong Guo, Raikhan Azamat, Yerulan Sagidolda
Abstract
Preparing TFTs with excellent electrical properties and reducing economic costs while shortening production time has far-reaching implications for the future of thin-film transistors.
Topics & Concepts
Materials scienceAnnealing (glass)Thin-film transistorOptoelectronicsComposite materialLayer (electronics)Thin-Film Transistor TechnologiesTransition Metal Oxide NanomaterialsZnO doping and properties