Litcius/Paper detail

2.5 A/mm/350 GHz aggressively scaled gate engineered Fe-doped AlN/GaN channel HEMT with graded InGaN Backbarrier on SiC-wafer for next generation RF power electronics applications

B. Mounika, J. Ajayan, Sandip Bhattacharya

2024Materials Science and Engineering B20 citationsDOI

Topics & Concepts

High-electron-mobility transistorMaterials scienceTransconductanceOptoelectronicsDopingSchottky barrierBand gapWaferThreshold voltageVoltageElectrical engineeringTransistorEngineeringDiodeGaN-based semiconductor devices and materialsSemiconductor Quantum Structures and DevicesGa2O3 and related materials
2.5 A/mm/350 GHz aggressively scaled gate engineered Fe-doped AlN/GaN channel HEMT with graded InGaN Backbarrier on SiC-wafer for next generation RF power electronics applications | Litcius