Self-powered Pt/a-Ga<sub>2</sub>O<sub>3</sub>/ITO vertical Schottky junction solar-blind photodetector with excellent detection performance
Liyu Ye, Shuren Zhou, Yuanqiang Xiong, Jie Tang, Xuan Wang, Xudong Li, Di Pang, Honglin Li, Hong Zhang, Lijuan Ye, Yuting Cui, Wanjun Li
Abstract
Self-powered solar-blind photodetectors (PDs) are promising for military and civilian applications owing to convenient operation, easy preparation, and weak-light sensitivity. In the present study, the solar-blind deep-ultraviolet (DUV) photodetector based on amorphous Ga 2 O 3 (a-Ga 2 O 3 ) and with a simple vertical stack structure is proposed by applying the low-cost magnetron sputtering technology. By tuning the thickness of the amorphous Ga 2 O 3 layer, the device exhibits excellent detection performance. Under 3 V reverse bias, the photodetector achieves a high responsivity of 671A/W, a high detectivity of 2.21 × 10 15 Jones, and a fast response time of 27/11 ms. More extraordinary, with the help of the built-in electric field at the interface, the device achieves an excellent performance in detection when self-powered, with an ultrahigh responsivity of 3.69 A/W and a fast response time of 2.6/6.6 ms under 254 nm light illumination. These results demonstrate its superior performance to most of the self-powered Schottky junction UV photodetectors reported to date. Finally, the Pt/a-Ga 2 O 3 /ITO Schottky junction photodiode detector is verified as a good performer in imaging, indicating its applicability in such fields as artificial intelligence, machine vision, and solar-blind imaging.