Thermally Stable Colorless Copolyimides with a Low Dielectric Constant and Dissipation Factor and Their Organic Field-Effect Transistor Applications
Satoshi Miyane, Chun‐Kai Chen, Yan‐Cheng Lin, Mitsuru Ueda, Wen‐Chang Chen
Abstract
We developed highly thermally resistant and colorless polyimides (CPIs) with an ultralow coefficient of thermal expansion (CTE) and sufficient mechanical durability as a flexible substrate for organic field-effect transistors (OFETs). The CPIs were synthesized from trans-1,4-cyclohexyl diamine (t-CHDA) with different ratios of 3,3′,4,4′-biphenyltetracarboxylic dianhydride (s-BPDA) and pyromellitic dianhydride (PMDA). The effects of the composition of s-BPDA and PMDA on the thermal, mechanical, electrical, and optical properties of CPIs were investigated. The optimized CPI, PI-3 with 90 mol % s-BPDA and 10 mol % PMDA, showed a relatively high elongation at break (8%) with a low CTE of 14 ppm K–1, a high glass transition temperature (Tg) of 340 °C, and a large tensile modulus (E) of 4.1 GPa, respectively. Besides, PI-3 possessed a high transparency with a light transmittance at 400 nm (T400) of 81% and a low cutoff wavelength (λcutoff) of 349 nm. Next, the dimer diamine of DDA (Priamine 1074) was introduced into the PI-3 structure to reduce the dielectric constant and enhance the stretchability. For example, PI-6C, with 85 mol % t-CHDA and 15 mol % DDA, showed a low dielectric constant (Dk) of 2.8, a low dissipation factor (Df) of 0.004, and a high T400 of 86% with maintained thermal and mechanical properties. Finally, a flexible OFET device using PI-3 as the substrate and dielectric was fabricated and characterized and exhibited an outstanding performance preservation after 1000 bending cycles or the high-temperature heating test, suggesting its excellent durability. The experimental results indicate that the CPIs studied have potential applications for transparent organic electronic devices.