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Effect of width scaling on RF and DC performance of AlGaN/GaN-based Ku-band multi-finger 250 nm high electron mobility transistor technology

Jaya Jha, Sreenadh Surapaneni, Akhil S. Kumar, Swaroop Ganguly, Dipankar Saha

2021Solid-State Electronics10 citationsDOI

Topics & Concepts

TransistorMaterials scienceOptoelectronicsScalingRadio frequencyPower (physics)FabricationPower densityRF power amplifierHigh-electron-mobility transistorDirect currentElectrical engineeringPhysicsEngineeringMathematicsCMOSVoltageAmplifierMedicineGeometryPathologyAlternative medicineQuantum mechanicsGaN-based semiconductor devices and materialsSilicon Carbide Semiconductor TechnologiesRadio Frequency Integrated Circuit Design
Effect of width scaling on RF and DC performance of AlGaN/GaN-based Ku-band multi-finger 250 nm high electron mobility transistor technology | Litcius