Realizing high thermoelectric performance in GeTe by defect engineering on cation sites
Can Zhu, Feng Luo, Jian Wang, Shun Zhang, Jiafu Wang, Hongxia Liu, Zhigang Sun
Abstract
A large ZT of 1.89 is obtained in GeTe with Ti/Bi co-doping and Ge self-doping on cation sites. Doping of 1.5 mol% Ti can enhance the effective mass and quality factor B . The Ge-excess method has a better modulation effect than the Ge-deficient method.
Topics & Concepts
Materials scienceDopingThermoelectric effectModulation (music)Thermoelectric materialsQuality (philosophy)Condensed matter physicsOptoelectronicsAnalytical Chemistry (journal)Composite materialThermodynamicsThermal conductivityPhysicsEpistemologyChromatographyPhilosophyChemistryAestheticsAdvanced Thermoelectric Materials and DevicesChalcogenide Semiconductor Thin FilmsPhase-change materials and chalcogenides