Impact of nitrogen doping on homoepitaxial diamond (111) growth
Yuta Nakano, Xufang Zhang, K. Kobayashi, Tsubasa Matsumoto, Takao Inokuma, Satoshi Yamasaki, Christoph E. Nebel, Norio Tokuda
Abstract
The impacts of nitrogen (N) doping on the lateral growth mode during two-dimensional (2D) nucleation, on the growth rate, and the incorporation of nitrogen (concentration [N]) of (111)-oriented diamond films were investigated by modulating the [N2]/[CH4] gas admixture ratio. The 2D nucleation density first increased with increasing [N2]/[CH4] ratio between 0.02 and 20%. Further increase of the [N2]/[CH4] ratio to up 200% caused a decrease of the nucleation density. The growth rates showed the similar N-doping dependence as the nucleation density variation. This is attributed to an initial increase of CN radicals in the regime 0.02 to 20%, followed by a reduction of CHx radicals in the regime 20 to 200%. The nitrogen incorporation concentration increases with increasing the [N2]/[CH4] ratio. The highest nitrogen concentration with 2 × 1020 atoms/cm3 is detected with [N2]/[CH4] = 200% and a relatively low nucleation density is achieved. These results are beneficial for the optimized formation of nitrogen-vacancy centers used in a quantum metrology and for device application such as inversion-channel diamond MOSFETs.