CuO Single-Nanowire-Based White-Light Photodetector
S. Raveesh, Vimal Kumar Singh Yadav, Roy Paily
Abstract
This letter reports the fabrication of copper-oxide (CuO) single-nanowire (SNW) back-to-back Schottky diode for white light detection. The device fabrication includes the synthesis of nanowires by thermal oxidation of copper, followed by microcantilever contact print ( μCCP) of silver nanoparticles (AgNP) electrodes. The metal-semiconductor-metal (MSM) structure exhibits a dark current of 1.40 nA and photocurrent of 2.55 μA for ±6 V bias. The AgNP/CuO SNW/AgNP device reveals a sharp rise and recovery for continuous operation under the bias stress. Further, fabricated device exhibits a remarkable photodetection with photosensitivity 1820, responsivity 4085 AW <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> , detectivity 3.81×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">13</sup> cmHz <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</sup> W <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> , and external quantum efficiency of 9.95×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> %.