Gate Oxide Variability Analysis of a Novel 3 nm Truncated Fin–FinFET for High Circuitry Performance
Mridul Prakash Kashyap, Rishu Chaujar
Topics & Concepts
TransconductanceMaterials scienceOxideControllabilityOptoelectronicsGate oxidePower MOSFETMOSFETElectrical engineeringTransistorApplied mathematicsVoltageMetallurgyMathematicsEngineeringSemiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit DesignFerroelectric and Negative Capacitance Devices