Enhancement-Mode GaN Monolithic Bidirectional Switch With Integrated Gate Driver for High Temperature Application
Yunsong Xu, Ang Li, Fan Li, Guohao Yu, Zhongming Zeng, Baoshun Zhang, Jiangmin Gu, Wen Liu
Abstract
Bidirectional switches are widely utilized in power applications, especially in AC-AC matrix converters and solid-state circuit breakers. This work demonstrates a GaN-based monolithically integrated bidirectional switch featuring a dual-gate HEMT, and drivers fabricated on the same chip. The experimental results, including both static and transient characteristics of the proposed bidirectional GaN switch, demonstrate high-temperature stability up to 250 °C. The operating frequency has been enhanced to 1 MHz at 10 V. High-temperature operation up to 250 °C as a ±311 V AC power chopper at 1 kHz is reported for the first time to the best of our knowledge. These significant potential enables the development of a high-frequency, high power density power conversion system.