Gallium Oxide for High‐Power Optical Applications
Huiyang Deng, Kenneth J. Leedle, Yu Miao, Dylan S. Black, Karel Urbánek, Joshua McNeur, Martin Kozák, Andrew Ceballos, Peter Hommelhoff, Olav Solgaard, Robert L. Byer, James S. Harris
Abstract
Abstract Gallium oxide (Ga 2 O 3 ) is an emerging wide‐bandgap transparent conductive oxide (TCO) with potential applications for high‐power optical systems. Herein, Ga 2 O 3 fabricated nanostructures are described, which demonstrate high‐power laser induced damage threshold (LIDT). Furthermore, the demonstration of an electron accelerator based on Ga 2 O 3 gratings is reported. These unique Ga 2 O 3 nanostructures provide acceleration gradients exceeding those possible with conventional RF accelerators due to the high breakdown threshold of Ga 2 O 3 . In addition, the laser damage threshold and acceleration performance of a Ga 2 O 3 ‐based dielectric laser accelerator (DLA) are compared with those of a DLA based on sapphire, a material known for its high breakdown strength. Finally, the potential of Ga 2 O 3 thin‐film coatings as field reduction layers for Si nanostructures is shown; they potentially improve the effective LIDT and performance of Si‐based DLAs and other high‐power optical structures. These results could provide a foundation for new high‐power optical applications with Ga 2 O 3 .