GaN/AlGaN superlattice based E-mode p-channel MES-FinFET with regrown contacts and >50 mA/mm on-current

Aditya Raj, Athith Krishna, Nirupam Hatui, Brian Romanczyk, Christian Wurm, Matthew Guidry, Robert Hamwey, N. Pakala, S. Keller, Umesh K. Mishra

20212021 IEEE International Electron Devices Meeting (IEDM)16 citationsDOI

Abstract

There is a strong need for a large band gap pFET device with good performance for an efficient high voltage CMOS platform for power conversion applications. In this work, we report on GaN/ AlGaN superlattice based MES-FinFET devices with MOCVD regrown p+ contacts around the fins. 75 nm wide FinFETs showed a normally-off operation with an on-current of 65 mA/mm, highest ever reported for any GaN based E-mode pFETs. Simultaneously, a large I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</inf> /I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</inf> > 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">7</sup> was also achieved.

Topics & Concepts

SuperlatticeMetalorganic vapour phase epitaxyOptoelectronicsCMOSChannel (broadcasting)Materials sciencePower (physics)Electrical engineeringPhysicsNanotechnologyEngineeringQuantum mechanicsLayer (electronics)EpitaxyGaN-based semiconductor devices and materialsGa2O3 and related materialsSilicon Carbide Semiconductor Technologies

GaN/AlGaN superlattice based E-mode p-channel MES-FinFET with regrown contacts and &gt;50 mA/mm on-current

Abstract

Topics & Concepts

GaN/AlGaN superlattice based E-mode p-channel MES-FinFET with regrown contacts and >50 mA/mm on-current