Conduction mechanisms responsible for leakage currents in RF sputtered HfO2 high-κ gate-oxide thin film MOS capacitors
J. Udaya Bhanu, Aminul Islam, P. Thangadurai
Topics & Concepts
Materials scienceCapacitorLeakage (economics)Amorphous solidHigh-κ dielectricOptoelectronicsOxideGate dielectricEquivalent oxide thicknessDielectricQuantum tunnellingGate oxideThermal conductionTime-dependent gate oxide breakdownSchottky diodeSputteringThin filmSchottky effectPoole–Frenkel effectElectrical engineeringVoltageNanotechnologyComposite materialChemistryTransistorMetallurgyMacroeconomicsEconomicsDiodeEngineeringOrganic chemistrySemiconductor materials and devicesFerroelectric and Negative Capacitance DevicesAdvancements in Semiconductor Devices and Circuit Design