Phonon-boundary scattering and thermal transport in Al<i>x</i>Ga1−<i>x</i>N: Effect of layer thickness
Dat Q. Tran, Rosalía Delgado Carrascón, John F. Muth, Tania Paskova, Muhammad Asif Nawaz, Vanya Darakchieva, T. Paskova
Abstract
Thermal conductivity of AlxGa1−xN layers with 0≤x≤0.96 and variable thicknesses is systematically studied by combined thermoreflectance measurements and a modified Callaway model. We find a reduction in the thermal conductivity of AlxGa1−xN by more than one order of magnitude compared to that of GaN, which indicates a strong effect of phonon-alloy scattering. It is shown that the short-mean free path phonons are strongly scattered, which leads to a major contribution of the long-mean free path phonons to the thermal conductivity. In thin layers, the long-mean free path phonons become efficiently scattered by the boundaries, resulting in a further decrease in the thermal conductivity. Also, an asymmetry of thermal conductivity as a function of Al content is experimentally observed and attributed to the mass difference between Ga and Al host atoms.