Temperature Dependence of Analog Performance, Linearity, and Harmonic Distortion for a Ge-Source Tunnel FET
Emona Datta, Avik Chattopadhyay, Abhijit Mallik, Yasuhisa Ōmura
Abstract
In this article, we report an investigation of the effects of variation in temperature in the range of 300-450 K on the analog performance and harmonic distortion (HD) characteristics of a Ge-source tunnel FET (TFET) using a numerical device simulator. Variation in the analog performance parameters, such as transconductance, intrinsic gain, and output resistance, is found to be small for such a large variation in temperature. HD parameters are also found to be almost insensitive to temperature variation over a good range.
Topics & Concepts
TransconductanceTotal harmonic distortionLinearityDistortion (music)Materials scienceAtmospheric temperature rangeElectronic engineeringOptoelectronicsElectrical engineeringEngineeringPhysicsTransistorVoltageAmplifierThermodynamicsCMOSAdvancements in Semiconductor Devices and Circuit DesignSemiconductor materials and devicesIntegrated Circuits and Semiconductor Failure Analysis