Preparation and Luminescence Properties of Broadband Orange-Emitting Persistent ScBaZn<sub>3</sub>GaO<sub>7</sub>:Bi<sup>3+</sup> Phosphor
Shulian Liu, Mingwei Fu, Peng Qiao, Yingguang Li, Degang Deng, Youjie Hua, Shiqing Xu, Hongping Ma
Abstract
This article describes a new kind of afterglow material, ScBaZn 3 GaO 7:Bi 3+, which was synthesized through a high-temperature solid-phase method. Its crystal structure, photoluminescent characteristics, and afterglow characteristics were studied and analyzed. Upon excitation at 344 nm, ScBaZn 3 GaO 7:Bi 3+ exhibits broadband emission with a central wavelength located at 571 nm (fwhm = 172.98 nm). The sample exhibits an internal quantum efficiency of 65.1%. The bright yellow persistent luminescence of the ScBaZn 3 GaO 7:Bi 3+ sample was observed after 365 nm irradiation. Thermoluminescence spectroscopy revealed four primary traps within ScBaZn 3 GaO 7:Bi 3+, with depths of 0.676, 0.794, 0.882, and 0.972 eV. The traps located at energy levels of 0.676 and 0.794 eV were identified as the key contributors to the sample’s afterglow. Finally, the ScBaZn 3 GaO 7:Bi 3+ sample was combined with a UV-LED chip to fabricate a high-power warm white-light-emitting diode (WLED) device, indicating the potential application prospect of ScBaZn 3 GaO 7:Bi 3+ phosphor in single-phase warm WLEDs.