Infrared optoelectronics in twisted black phosphorus
Shouheng Chen, Zihan Liang, Jinshui Miao, Xiang‐Long Yu, Shuo Wang, Yule Zhang, Han Wang, Wang Yun, Chun Cheng, Gen Long, Taihong Wang, Lin Wang, Han Zhang, Xiaolong Chen
Abstract
Electrons and holes, fundamental charge carriers in semiconductors, dominate optical transitions and detection processes. Twisted van der Waals (vdW) heterostructures offer an effective approach to manipulate radiation, separation, and collection processes of electron-hole pairs by creating an atomically sharp interface. Here, we demonstrate that twisted interfaces in vdW layered black phosphorus (BP), an infrared semiconductor with highly anisotropic crystalline structure and properties, can significantly alter both recombination and separation processes of electron-hole pairs. On the one hand, the twisted interface breaks the symmetry of optical transition states resulting in infrared light emission of originally symmetry-forbidden optical states along the zigzag direction. On the other hand, spontaneous electronic polarization/bulk photovoltaic effect is generated at the twisted interface enabling effective separation of electron-hole pairs without external voltage bias. This is supported by first-principles calculations and repeated experiments at various twisted angles from 0 to 90°. Importantly, these phenomena can be observed in twisted heterostructures with thickness beyond two-dimensional. Our results suggest that the engineering of vdW twisted interfaces is an effective strategy for manipulating the optoelectronic properties of materials and constructing functional devices. Here, the authors report a study of the infrared optoelectronic properties of twisted 2D black phosphorus (BP), showing photoluminescence emission from optical transitions that are symmetry-forbidden in BP and spontaneous electronic polarization generating interfacial bulk photovoltaic effect.