The Co-Improvement of Selectivity and Uniformity on NbOₓ-Based Selector by Al-Doping
Ao Chen, Yuyang Fu, Guokun Ma, Gaoqi Yang, Nengfan Liu, Xiaohu Zhao, Ziqi Zhang, Tao Li, Houzhao Wan, Yiheng Rao, Jinxia Duan, Liangping Shen, Jun Zhang, Peng Sun, Dao-Hong Yang, Ting‐Chang Chang, Hao Wang
Abstract
Selectivity and uniformity are the stuck issues for the NbO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><i>x</i></sub> –based selectors applied in memory arrays. In this letter, we experimentally demonstrated that the selector through Al-doping had significant improvement of selectivity (250%) and uniformity (from 4% to 1%). To understand the physical mechanism, the thermoelectric coupling model was employed. It was simulatively illustrated that lower OFF current and higher selectivity were induced by the increase of the Schottky barrier height and Schottky distance. Meanwhile, the ability of constraining oxygen vacancies reduced the random immigration, which contributed to a better uniformity. This study provided an effective way to improve the performance of the selectors and overcome the barrier in the application of 3D integrated memory.