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Methodology for the characterization and observation of filamentary spots in HfOx-based memristor devices

Samuel Poblador, Marcos Maestro-Izquierdo, M. Zabala, Mireia Bargalló González, F. Campabadal

2020Microelectronic Engineering28 citationsDOI

Topics & Concepts

TinMaterials scienceElectrodeMemristorInsulator (electricity)Layer (electronics)OptoelectronicsResistive random-access memoryDielectricCharacterization (materials science)Degradation (telecommunications)Resistive touchscreenMicrostructureNanotechnologyComposite materialElectronic engineeringElectrical engineeringChemistryMetallurgyEngineeringPhysical chemistryAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesNeuroscience and Neural Engineering
Methodology for the characterization and observation of filamentary spots in HfOx-based memristor devices | Litcius