A layered (<i>n</i>-C<sub>4</sub>H<sub>9</sub>NH<sub>3</sub>)<sub>2</sub>CsAgBiBr<sub>7</sub> perovskite for bipolar resistive switching memory with a high ON/OFF ratio
Soyeon Kim, June‐Mo Yang, Sun-Ho Lee, Nam‐Gyu Park
Abstract
Reduction of dimensionality of a lead-free perovskite from 3D to 2D improves the ON/OFF ratio from 10 2 to 10 7 .
Topics & Concepts
Perovskite (structure)Materials scienceResistive random-access memoryCurse of dimensionalityCrystallographyPhysical chemistryChemistryComputer scienceElectrodeMachine learningPerovskite Materials and ApplicationsAdvanced Memory and Neural ComputingTransition Metal Oxide Nanomaterials