Experimental Demonstration of Monolithic Bidirectional Switch With Anti-Paralleled Reverse Blocking p-GaN HEMTs
Haiyong Wang, Wei Mao, Jingtao Luo, Cui Yang, Jiabo Chen, Shenglei Zhao, Ming Du, Xuefeng Zheng, Chong Wang, Chunfu Zhang, Jincheng Zhang, Yue Hao
Abstract
A monolithic bidirectional switch based on anti-paralleled two reverse blocking p-GaN HEMTs has been proposed and demonstrated in this work. The recessed Schottky drain technique is utilized to effectively reduce the on-state voltage and thus lowering the power loss of bidirectional switches. A significant reduction in parasitic elements and switch area is obtained by monolithic integration. The fabricated bidirectional switch exhibits a threshold voltage of ~1.85 V, on-state voltage of ~0.63 V, and the forward and reverse off-state breakdown voltages of ~650 V at I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">S1-S2</sub> = 1 μA/mm. In addition, the function of proposed bidirectional switch as an AC power chopper has been successfully verified.